Schottky barrier contact to compound semiconductor with three la

Details Schottky barrier contact to compound semiconductor with three la Schottky barrier contact to compound semiconductor with three la

1980-01-02

1982-03-23

Clawson, Jr., Joseph E.

357 52, 357 71, 357 73, H01L 2948

Patent

active

043216129

ABSTRACT:
A Schottky barrier type compound semiconductor device includes an N type compound semiconductor substrate, an insulation layer having a penetrating hole through which part of the substrate is exposed, and a layer of high melting metal formed through the penetrating hole to form a Schottky barrier with the substrate. The insulation layer includes a phosphosilicate glass layer containing phosphorus at a concentration of 1.times.10.sup.21 /cm.sup.3 or more and contacting the substrate.

REFERENCES:
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patent: 3617929 (1971-11-01), Strack et al.
patent: 3632433 (1972-01-01), Tokuyama et al.
patent: 3716765 (1973-02-01), Rueffer et al.
patent: 4079504 (1978-03-01), Kosa
Y. Sato et al., "GaAs Schottky Barrier Diodes, ECL-1314," Electr. Comm. Lab. Tech. J., vol. 18 #7, 1969, pp. 1717-1727.
A. Nara et al., "High Performance Ni-Pd/GaAs Sch. Barr. Diodes," 9th Conf. S.--S. Dev., Tokyo, C-2-4, 1977, pp. 55, 56.
P. Totta et al., "Low Barrier HT . . . Process," IBM Tech. Discl. Bull., vol. 20 #11B, Apr. 1978, pp. 4812, 4813.

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