Schottky barrier amorphous silicon solar cell with thin doped re

Details Schottky barrier amorphous silicon solar cell with thin doped re Schottky barrier amorphous silicon solar cell with thin doped re

1978-04-28

1979-08-07

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

136 89SJ, 136 89CC, 357 2, 357 15, 357 30, H01L 3106

Patent

active

041636775

ABSTRACT:
A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4117506 (1978-09-01), Carlson et al.
patent: 4126150 (1978-11-01), Bell et al.
J. M. Shannon, "Control of Schottky Barrier Height Using Highly Doped Surface Layers," Solid-State Electronics, vol. 19, pp. 537-543, (1976).

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