Schotiky barrier height for metal contacts to III-V semiconducto

Details Schotiky barrier height for metal contacts to III-V semiconducto Schotiky barrier height for metal contacts to III-V semiconducto

1989-05-16

1991-03-12

Hille, Rolf

357 16, 357 22, H01L 2948, H01L 29161, H01L 2980

Patent

active

049996851

ABSTRACT:
A metal to semiconductor contact is provided wherein the Schottky barrier ight is about 1 eV and independent of the contact metal. The metal, such as Au, Cr, or Ti, is deposited on a heavily doped p-type layer of silicon which is about 15 to 30 angstroms thick. The interface layer is deposited on gallium arsenide.

REFERENCES:
patent: 4706104 (1987-11-01), Switzer
patent: 4794444 (1988-12-01), Liu et al.

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