Schemes to form silicon-on-diamond structure

Details Schemes to form silicon-on-diamond structure Schemes to form silicon-on-diamond structure

1993-07-02

1994-12-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148333, 148334, 437 62, 437 86, 437974, H01L 2170, H01L 310264

Patent

active

053765796

ABSTRACT:
Processes to produce Silicon-On-Diamond (SOD) Structures. In one process, two epitaxial layers are grown on a seed silicon wafer. The first layer is an etch stop layer and the second layer is an undoped silicon layer. A CVD diamond is deposited on top of this substrate, and covered with a thin layer of polysilicon. This structure is now bonded to another silicon handle wafer. The seed silicon layer and the etch stop layer are removed by mechanical means and chemical etching. The substrate consists of a silicon substrate, a polysilicon layer, a diamond layer and an undoped silicon layer. In a second process a diamond layer is deposited onto a SIMOX Wafer and polysilicon is deposited upon the diamond layer. A silicon wafer is bonded to the polysilicon layer and the SIMOX wafer less the silicon overlayer on the buried oxide is removed by grinding and etching to obtain silicon-on-diamond structure. A third process described uses a thick polysilicon as a handle wafer instead of bonding a silicon wafer as in processes I and II and uses the approach of the two processes described above. In this process a non-edge rounded silicon wafer as a starting substrate.

REFERENCES:
patent: 4768011 (1988-08-01), Hattori et al.
patent: 4863529 (1989-09-01), Imai
patent: 4981818 (1991-01-01), Anthony et al.
patent: 5122509 (1992-06-01), Beetz, Jr. et al.
patent: 5131963 (1992-07-01), Ravi
patent: 5155559 (1992-10-01), Humphreys
patent: 5173761 (1992-12-01), Dreifus
patent: 5186785 (1993-02-01), Annamalai
patent: 5272104 (1993-12-01), Schrantz et al.
Wolf et al., "Silicon Processing for the VLSI Era", Lattice Press, Sunset Beach, Calif., pp. 23-25 (1986).

Affiliated with

Also associated with

Rating

Schemes to form silicon-on-diamond structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Schemes to form silicon-on-diamond structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schemes to form silicon-on-diamond structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-919141