Scheme for page erase and erase verify in a non-volatile memory

Details Scheme for page erase and erase verify in a non-volatile memory Scheme for page erase and erase verify in a non-volatile memory

1998-10-20

1999-11-30

Phan, Trong

Static information storage and retrieval

Floating gate

Particular biasing

36518512, 36518518, 36518522, 365218, G11C 1604, G11C 1606

Patent

active

059954175

ABSTRACT:
A non-volatile memory device includes a plurality of MOS transistors 34 and 36 connected to respective word lines 16 and 18 to allow individual pages of memory stored in the memory cells 8a, 10a and 8b, 10b on the respective word lines 16 and 18 to be erased and erase verified. A method of erasing a page of memory cells includes the steps of applying an erase voltage to one of the MOS transistors 16 and 18 to erase the page of memory cells along the respective word line, and applying an initial erase-inhibit floating voltage to other MOS transistors which are connected to the word lines unselected for page erase. In an erase verify mode, an erase verify voltage is applied to the word line which was selected for page erase in the erase mode, and an erase verify unselect voltage is applied to the word lines which was not selected for page erase.

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