Scatterometry for junction metrology

Optics: measuring and testing – Of light reflection – With diffusion

Reexamination Certificate

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Reexamination Certificate

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06950190

ABSTRACT:
The use of scatterometry measurements is proposed for the evaluation of the implantation or annealing of dopants in a semiconductor. In accordance with the subject method, a probe beam of light illuminates the wafer having the dopants implanted therein. The light reflected from the sample is measured and subjected to a scatterometry analysis. The information derived is correlated to the implant region so that parameters of the implant, such as depth of a junction and lateral spreading of the implant or the dose of implanted ions can be evaluated.

REFERENCES:
patent: 4579463 (1986-04-01), Rosencwaig et al.
patent: 4636088 (1987-01-01), Rosencwaig et al.
patent: 4854710 (1989-08-01), Opsal et al.
patent: 5607800 (1997-03-01), Ziger
patent: 5739909 (1998-04-01), Blayo et al.
patent: 5798837 (1998-08-01), Aspnes et al.
patent: 5867276 (1999-02-01), McNeil et al.
patent: 5963329 (1999-10-01), Conrad et al.
patent: 5978074 (1999-11-01), Opsal et al.
patent: 6383824 (2002-05-01), Lensing
patent: 6429943 (2002-08-01), Opsal et al.
patent: 6451621 (2002-09-01), Rangarajan et al.
patent: 6458605 (2002-10-01), Stirton
patent: 6660543 (2003-12-01), Stirton et al.
patent: 6697153 (2004-02-01), Wright et al.
patent: 6806951 (2004-10-01), Wack et al.
patent: 6823231 (2004-11-01), Bode et al.
patent: 2002/0038196 (2002-03-01), Johnson et al.
patent: 2002/0151092 (2002-10-01), Li et al.
patent: 2003/0223066 (2003-12-01), Lee et al.
patent: 2003/0224261 (2003-12-01), Schulz
Z.L. Wu et al., “Laser modulated scattering as a nondestructive evaluation tool for optical surfaces and thin film coatings,”Part of the Symposium on Laser-Induced Damage in Optical Materials:1998—Boulder, Colorado, SPIE, vol. 3578, Sep.-Oct. 1998, 9 pages in length.
Z.L. Wu et al., “Single-beam photothermal microscopy—a new diagnostic tool for optical materials,”Part of the Symposium on Laser-Induced Damage in Optical Materials:1998—Boulder, Colorado, SPIE, vol. 3578, Sep.-Oct. 1998, 10 pages in length.

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