Optics: measuring and testing – Of light reflection – With diffusion
Reexamination Certificate
2005-09-27
2005-09-27
Stafira, Michael P. (Department: 2877)
Optics: measuring and testing
Of light reflection
With diffusion
Reexamination Certificate
active
06950190
ABSTRACT:
The use of scatterometry measurements is proposed for the evaluation of the implantation or annealing of dopants in a semiconductor. In accordance with the subject method, a probe beam of light illuminates the wafer having the dopants implanted therein. The light reflected from the sample is measured and subjected to a scatterometry analysis. The information derived is correlated to the implant region so that parameters of the implant, such as depth of a junction and lateral spreading of the implant or the dose of implanted ions can be evaluated.
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Stafira Michael P.
Stallman & Pollock LLP
Therma-Wave, Inc.
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