Scanning systems for high resolution e-beam and X-ray lithograph

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, 25049224, H01J 37317

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active

054245494

ABSTRACT:
An electron-beam lithography apparatus and method, including an electron source with a mask or photocathode for generating a patterned electron beam; an electron-sensitive resist layer; a conductive plate with a slit, located between the electron source and the resist layer, with the patterned electron beam passing only through the slit; an electric field between the electron source and the conductive plate to accelerate electrons, with the conductive plate causing the electric field between the plate and the resist to be substantially zero; a magnetic field between the electron source and the resist, to focus electrons on the resist; and alignment device for synchronously scanning the mask or photocathode and the resist at the same velocity relative to the slit and to the electron source, and at zero velocity relative to each other, so that substantially all of the pattern of the patterned electron beam is imaged on the resist without substantial change in size.

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Ward et al., "A 1:1 Electron Stepper," J. Vac. Sci. Technol. B, vol. 4, No. 1, pp. 89-93 (1986).
H. Kinoshita et al., "Soft X-ray Reduction Lithography Using Multilayer Mirrors," J. Vac. Sci. Technol. B, vol. 7, No. 6, pp. 1648-1651 (1989).

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