Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-01-31
2006-01-31
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S442110
Reexamination Certificate
active
06992310
ABSTRACT:
Ion implantation scanning systems and methods are presented for providing ions from an ion beam to a treatment surface of a workpiece, wherein a beam is electrically or magnetically scanned in a single direction or plane and an implanted workpiece is rotated about an axis that is at a non-zero angle relative to the beam scan plane, where the workpiece rotation and the beam scanning are synchronized to provide the beam to the workpiece treatment surface at a generally constant angle of incidence.
REFERENCES:
patent: 4700077 (1987-10-01), Dykstra et al.
patent: 4922106 (1990-05-01), Berrian et al.
patent: 5091655 (1992-02-01), Dykstra et al.
patent: 5160846 (1992-11-01), Ray
patent: 5177366 (1993-01-01), King et al.
patent: 5278420 (1994-01-01), Sugiyama
patent: 5780863 (1998-07-01), Benveniste et al.
patent: 5898179 (1999-04-01), Smick et al.
patent: 6075249 (2000-06-01), Olson
patent: 6222196 (2001-04-01), Mack
patent: 6429442 (2002-08-01), Tomita et al.
patent: 6437351 (2002-08-01), Smick et al.
patent: 6521895 (2003-02-01), Walther et al.
patent: 6559461 (2003-05-01), Seo
patent: 6677599 (2004-01-01), Berrian
patent: 6690022 (2004-02-01), Larsen et al.
patent: 6710360 (2004-03-01), Ferrara
patent: 6740894 (2004-05-01), Mitchell
“NV-6208: A Midcurrent Ion Implanter With Constant Beam Angle or Incidence”, Jimmy L. Fleming, Jerald P. Dykstra, Monty L. King, Andy M. Ray and Robert B. Simonton, Nuclear Instruments and Methods in Physics Research B 37/38 (1989), North Holland, Amsterdam, pp. 601-604.
Ferrara Joseph
Graf Michael A.
Vanderberg Bo H.
Axcelis Technologies Inc.
Berman Jack I.
Eschweiler & Associates LLC
LandOfFree
Scanning systems and methods for providing ions from an ion... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Scanning systems and methods for providing ions from an ion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scanning systems and methods for providing ions from an ion... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3533064