Scanning spreading resistance probe

Fishing – trapping – and vermin destroying

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Details

324765, 250306, H01L 2166, G01R 3126, G01N 2300

Patent

active

057100527

ABSTRACT:
An accurate method of measuring the two-dimensional doping profile of a semiconductor by measuring an electrical parameter along a path of a dopant iso-concentration. Thin vertical or horizontal slices of the semiconductor integrated circuit are provided and are probed to allow the electrical parameter to be measured through a single concentration area.

REFERENCES:
patent: 5185273 (1993-02-01), Jasper
patent: 5217907 (1993-06-01), Buluccea et al.
patent: 5520769 (1996-05-01), Barrett et al.
patent: 5523700 (1996-06-01), Williams et al.

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