Measuring and testing – Testing of material
Reexamination Certificate
2006-08-22
2006-08-22
Raevis, Robert (Department: 2856)
Measuring and testing
Testing of material
C073S105000
Reexamination Certificate
active
07093509
ABSTRACT:
Scanning probe techniques based on the measurement of impedance spectroscopy using a conductive an SPM tip is provided and applied to the study of local transport properties, especially at a grain boundary. The contributions of the grain boundaries and tip-surface interaction can be distinguished based on the analysis of the equivalent circuit. The technique is applicable for both the spatially resolved study of transport mechanisms of polycrystalline semiconductors and the tip-surface contact quality. A piezoresponse force microscopy technique yields quantitative information about local non-linear dielectric properties and higher order electromechanical coupled of ferroelectrics.
REFERENCES:
patent: 5394083 (1995-02-01), Jiles
patent: 6498502 (2002-12-01), Edwards et al.
patent: 2003/0132376 (2003-07-01), Bonnell et al.
Abdullah, K., et al., “Low frequency and low temperature behavior of ZnO-based varistor by ac impedance measurements,”J. Appl. Phys., 1991, 69(7), 4046-4052.
Arakawa, H., et al., “Spatially resolved measurements of the capacitance by scanning tunneling microscope combined with a capacitance bridge,”J. of Vac. Sci. Technol. B, 2001, 19(4), 1150-1153.
Clarke, D.R., “Varistor ceramics,”J. Am. Ceram. Soc., 1999, 82(3), 485-502.
De Wolf, P., “Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy,”Appl. Phys. Lett., 1998, 73(15), 2155-2157.
De Wolf, P., et al., “Lateral and vertical dopant profiling in semiconductors by atomic force microscopy using conducting tips,”J. of Vac. Sci. Technol. A, 1995, 13(3), 1699-1704.
Durkan, C., et al., “Investigations into local ferroelectric properties by atomic force microscopy,”Ultramicroscopy, 2000, 82, 141-148.
Eng, L.M., et al., “Nanoscale reconstruction of surface crystallography from three-dimensional polarization distribution in ferroelectric barium-titanate ceramics,”Appl. Phys. Lett., 1999, 74(2), 233-235.
Eyben, M., et al., “Scanning spreading resistance microscopy and spectroscopy for routine and quantitative two-dimensional carrier profiling,”J. of Vac. Sci. Technol. B, 2002, 20(1), 471-478.
Furukawa, T., et al., “Electrostriction as the origin of piezoelectricity in ferroelectric polymers,”Jpn. J. Appl. Phys., 1990, 29(4), 675-680.
Gruverman, A., et al., “Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy,”J. Vac. Sci. &Technol. B, 1995, 13(3), 1095-1099.
Gupta, T.K., “Microstructural engineering through donor and acceptor doping in the grain and grain boundary of a polycrystalline semiconducting ceramic,”J. of Mater. Res., 1992, 7(12), 3280-3295.
Guy, I.L., et al., “Piezoelectricity and electrostriction in ferroelectric polymers,”Ferroelectrics, 2001, 264, 33-38.
Hench, L.L., et al., “Ionic and defect conductors,”Principles of Electronic Ceramics, Hench, L.L. (Eds.),John Wiley&Sons Inc., 1990,Chap. 4, p. 136-184.
Hong, B.-S., et al., “Equilibrium electrical property measurements in electroceramics,”Key Eng. Mater., 1997, 125-126, 163-186.
Jiang, S.P., et al., “Electrochemical techniques in studies of solid ionic conductors,”Key Eng. Mater., 1997, 125-126, 81-132.
Kalinin, S.V., et al., “Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces,”Phys. Rev. B, 2002, 65, 125408-1-1245408-11.
Kalinin, S.V., et al., Electrostatic and Magnetic Force Microscopy,Wiley VCH, NY, 2000,Chapter 7, 205-251.
McDonald, J., “Introduction to the LEVM complex nonlinear least squares fitting program,”LEVM Manual, 1999,Issue 8.0, Section 1, 1-25.
Newnham, V., et al., “Electrstriction: nonlinear electromechanical coupling in solid dielectrics,” J. Phys. Chem. B, 1997, 101, 10141-10150.
Raistrick, I.D., et al., “The electrical analogs of physical and chemical processes,”Physical and Electrochemical Models, 1987,Chapter 2, 27-131.
Rosner, B.T., et al., “Microfabricated silicon coaxial field sensors for near-field scanning optical and microwave microscopy,”Sensors&Actuators A, 2002, 185-194.
Strukov, B.A., et al.,Ferroelectric Phenomena in Crystals: Physical Foundations, Strukov, B.A., et al. (Eds.),Sprnger-Verlag Heidelberg, 1998,Chap. 5, 110-115.
Sze, S.M., “Metal-semiconductor devices,”Physics of Semiconductor Devices, Wiley-Interscience, 1981, 363-421.
Tran, T., et al., “Zeptofarad” (10−21F) resolution capacitance sensor for scanning capacitance microscopy,Rev. Sci. Instrum., 2001, 72(6), 2618-2623.
Zhang, Q.M., et al., “Laser interferometer for the study of piezoelectric and electrostrictive strains,”J. Appl. Phys., 1988, 63(8), 2492-2496.
Bonnell Dawn A.
Kalinin Sergei V.
Shao Rui
Raevis Robert
The Trustees of the University of Pennsylvania
Woodcock & Washburn LLP
LandOfFree
Scanning probe microscopy apparatus and techniques does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Scanning probe microscopy apparatus and techniques, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scanning probe microscopy apparatus and techniques will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3615820