Scanning probe based lithographic alignment

Etching a substrate: processes – Forming pattern using lift off technique

Reexamination Certificate

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C216S044000, C216S052000

Reexamination Certificate

active

06955767

ABSTRACT:
The lithographic process described herein involves aligning a patterned mold with respect to an alignment mark that is disposed on a substrate based upon interaction of a scanning probe with the alignment mark. By this method, the patterned mold may be aligned to an atomic accuracy (e.g., on the order of 10 nm or less), enabling nanometer-scale devices to be fabricated. A device formed by this lithographic method and a system for implementing this lithographic method with alignment also are described.

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patent: WO02/17383 (2002-02-01), None
D L White and O R Wood—“Novel Alignment System for Inprint Lithography”—J Vac Sci Technol B 18(6) Nov./Dec. 2000—pp. 3552-3556.
Stephen Y. Chou et al., “Imprint Lithography with 25-Nanometer Resolution,” Science, vol. 272 (Apr. 5, 1996).

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