Etching a substrate: processes – Forming pattern using lift off technique
Reexamination Certificate
2005-10-18
2005-10-18
Olsen, Allan (Department: 1763)
Etching a substrate: processes
Forming pattern using lift off technique
C216S044000, C216S052000
Reexamination Certificate
active
06955767
ABSTRACT:
The lithographic process described herein involves aligning a patterned mold with respect to an alignment mark that is disposed on a substrate based upon interaction of a scanning probe with the alignment mark. By this method, the patterned mold may be aligned to an atomic accuracy (e.g., on the order of 10 nm or less), enabling nanometer-scale devices to be fabricated. A device formed by this lithographic method and a system for implementing this lithographic method with alignment also are described.
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Hewlett-Packard Development Company LP.
Olsen Allan
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