Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
1998-12-11
2003-05-20
Leung, Quyen (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045013
Reexamination Certificate
active
06567448
ABSTRACT:
Solid state semiconductor light emitters are important devices in such diverse applications such as optoelectronic communication systems and high-speed printing systems. It is well-known in the proven art of silicon to provide suspension and actuation schemes, for example, comb drives using bending springs or parallel plate actuation using torsion springs. For optical beam steering applications, these silicon steering elements are typically combined with a light source in a separate package, or even with a light source ‘glued’ or bonded onto the silicon steering chip. To make an integrated device, it is necessary to develop MEMS fabrication technology for GaAs-based materials, such techniques including deep etching techniques to make high aspect ratio structures. It is highly desirable to combine the optical characteristics of GaAs materials with the structural and electrical characteristics of silicon.
U.S. Pat. Nos. 5,536,988, 5,640,133, 5,629,790 and 5,025,346, “Fabrication of Submicron High-Aspect-Ratio GaAs Actuators” Zhang et al., Journal of Microelectromechanical.Systems Vol. 2, No.2, p. 66-73, June 1993, “Laterally Driven Polysilicon Resonant Microstructure” Tang et al., IEEE Micro Electro Mechanical Systems pp. 53-59, February 1989 (reprint), and “Electrostatic-comb Drive of Lateral Polysilicon Resonators” Tang et al., Transducers '89, Proceedings of the 5th International Conference on Solid-State Sensors and Actuators and Eurosensors III, Vol. 2, pp. 328-331, June 1990 (reprint) show the state of the art of micro-electromechanical systems (MEMS) actuators and methods of fabricating these devices. U.S. Pat. Nos. 5,747,366 and 5,719,891, H. J. Yeh, and J. S. Smith, “Integration of GaAs VCSEL on Si by substrate removal”, Appl. Phys. Lett. Vol 64, pp. 1466-1468 (1994) and Y. H. Lo, et al. “Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement” Appl. Phys. Lett. Vol. 62, pp. 1038-1040 (1993) show the state of the art of semiconductor light emitting assemblies.
U.S. patent application Ser. No. 08/761,681, entitled “Raster Output Scanner with Pivotal Mirror for Process Direction Light Spot Position Control” filed on Dec. 6, 1996 and assigned to the same assignee as the present invention teaches a MEMS torsional control device.
U.S. patent application Ser. No. 08/940,867, entitled “Highly compact Vertical Cavity Surface Emitting Lasers” filed on Sep. 30, 1997 and assigned to the same assignee as the present invention teaches the formation of highly compact and well-defined VCSELs.
U.S. patent application Ser. No. 09/173,329, entitled “Monolithic Scanning Light Emitting Devices” filed on Oct. 15, 1998 and assigned to the same assignee as the present invention teaches a micro-machined movable light emitting assembly formed on or from a III-V substrate, preferably a GaAs substrate. The movable light emitting assemblies are actuated using force generators to generate various degrees of movement depending upon the type of stage suspension and actuation mechanism used.
All of the above references are hereby incorporated by reference.
SUMMARY OF THE INVENTION
The present invention is drawn to integrating GaAs-based optical devices with Si-based MEMS structures. The proposed devices utilize superior optical properties of III-V compounds and superior mechanical properties of Si, as well as matured fabrication technologies of Si-MEMS. The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuator provides linear or angular scanning.
REFERENCES:
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patent: 5025346 (1991-06-01), Tang et al.
patent: 5055731 (1991-10-01), Nihei et al.
patent: 5536988 (1996-07-01), Zhang et al.
patent: 5628917 (1997-05-01), MacDonald et al.
patent: 5640133 (1997-06-01), MacDonald et al.
patent: 5719891 (1998-02-01), Jewell
patent: 5747366 (1998-05-01), Brillouet et al.
patent: 5764671 (1998-06-01), Lebby et al.
“Fabrication of Submicron High-Aspect-Ratio GaAs Actuators”, by Z. Lisa Zhang & Noel C. MacDonald, Journal of Microelectromechanical Systems, vol. 2, No. 3, Jun., 1993, pp. 66-73.
“Laterally Driven Polysilicon Resonant Microstructures”, by William C. Tang, Tu-Cuong H. Nguyen and Roger T. Howe, Proceedings IEEE Micro Electro Mechanical Systems, pp. 53-59, Feb., 1989.
“Electrostatic-comb Drive of Lateral Polysilicon Resonators”, by William C. Tang, Tu-Cuong H. Nguyen, Michael W. Judy & Roger W. Howe, Transducers '89, Proceedings of the 5thInternational Conference on Solid-State Sensors and Actuators and Eurosensors III, vol. 2, pp. 328-331, Jun., 1990.
U.S. patent application Ser. No. 08/761,681, entitled “Raster Output Scanner with Pivotal Mirror for Process Direction Light Spot Position Control” filed on Dec. 6, 1996.
U.S. patent application Ser. No. 08/940,867, entitled “Highly Compact Vertical Cavity Surface Emitting Lasers” filed Sep. 30, 1997.
U.S. patent application Ser. No. 09/173,329, entitled “Monolithic Scanning Light Emitting Devices”, filed on Oct. 15, 1998.
“Semiconductor Lasers on Si Substrates Using the Technology of Bonding by Atomic Rearrangement” by Y.H. Lo, R. Bhat and D.M. Hwang, C. Chua and C.H. Lin, Appl. Phys. Lett., vol. 62. No. 10, Mar. 8, 1993, pp. 1038-1040.
“Integration of GaAs Vertical-Cavity Surface Emitting Laser on Si by Substrate Removal”, by Hsi-Jen J. Yeh and John S. Smith, Appl. Phys. Lett., vol. 64, No. 12, Mar. 12, 1994, pp. 1466-1468.
Bringans Ross D.
Chua Christopher L.
Floyd Philip D.
Kubby Joel A.
Peeters Eric
Cox Diane M.
Henn David E.
Leung Quyen
Xerox Corporation
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