Scanning control system involved in an ion-implantation apparatu

Details Scanning control system involved in an ion-implantation apparatu Scanning control system involved in an ion-implantation apparatu

1992-11-13

1994-01-11

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, 250397, H01J 37317

Patent

active

052784207

ABSTRACT:
The invention provides a novel scanning control system of preventing any over-scanning involved in an ion-implantation apparatus accomplishing an electrostatic X-scanning and a mechanical Y-scanning. The system includes a liner detecting arrangement for detecting over-scanning comprising a horizontal and sequential alignment of plural Faraday tubes. The detecting arrangement having a larger length than a diameter of a wafer is located behind the wafer mounted on a platen. The system also includes an X-scanning width control feature which is electrically connected to the detecting arrangement to fetch results of over-scanning detection. The X-scanning width control feature is determinative of a frequency of X-scanning associated with a width of X-scanning and supplies X-scanning frequency control voltage signals to X-deflector electrode plates making a pair thereby preventing over-scanning. The system further includes a Y-scanning speed control feature for controlling a speed of Y-direction movement of the wafer according to the frequency of the X-scanning thereby securing an uniformity of ion-implantation to the wafer.

REFERENCES:
patent: 4633138 (1986-12-01), Tokiguchi et al.
patent: 4922106 (1990-05-01), Berrian et al.
patent: 5068539 (1991-11-01), Nogami et al.

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