Scan technique to reduce transient wafer temperatures during ion

Details Scan technique to reduce transient wafer temperatures during ion Scan technique to reduce transient wafer temperatures during ion

1993-09-21

1996-01-23

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250397, 250398, H01J 37317

Patent

active

054867029

ABSTRACT:
During ion implantation, beam heating of the substrates must be reduced to eliminate self-annealing of the wafers during implant and to eliminate damager to masking materials, principally photoresist, that is mounted on the surface of the wafers. In this work, we describe a technique which may be used with both single-wafer and batch ion implantation systems to reduce transient wafer temperatures during implant.

REFERENCES:
patent: 3778626 (1973-12-01), Robertson
patent: 4234797 (1980-11-01), Ryding
patent: 4393312 (1983-07-01), Collier et al.
patent: 4449051 (1984-05-01), Berkowitz
patent: 4570070 (1986-02-01), Tabei
patent: 4712013 (1987-12-01), Nishimura et al.
patent: 5124557 (1992-06-01), Aitken
patent: 5194748 (1993-03-01), Aitken
patent: 5216253 (1993-06-01), Koike
Benveniste, "Wafer Cooling in a High Current Ion Implanter" (Amsterdam, North Holland, 1992).
Mack, "Wafer Cooling and Wafer Charging in Ion Implantation" (Nuc. Instr. and Meth. 821 (1987) 366).

Affiliated with

Also associated with

Rating

Scan technique to reduce transient wafer temperatures during ion does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Scan technique to reduce transient wafer temperatures during ion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scan technique to reduce transient wafer temperatures during ion will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1506435