Scan controller for ion implanter device

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250358, H01J 37256

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active

045932000

ABSTRACT:
A scan controller 14 for directing an ion beam 152 from an ion implanter device 142 onto a wafer 148 includes a generator 10, 12 for generating first and second signals for guiding the ion beam along two separate axes plus a compensator 28, 72 for compensating the signal so that the speed of the impact point of the ion beam 152 on the wafer 148 is substantially constant as the ion beam 152 scans across the wafer 148 to obtain a substantially even distribution of ions on the wafer 148 along the path of the ion beam 152.

REFERENCES:
patent: 3688203 (1972-08-01), Harrison
patent: 3932817 (1976-01-01), Rogers
patent: 4013262 (1977-03-01), Schott et al.
patent: 4144579 (1979-03-01), Nossen et al.
patent: 4283631 (1981-08-01), Turner
Edwin J. Rogers, "Optimal Selection of Scanning Frequencies in Ion Implantation Systems with X-Y" 3rd Internat'l Conf. on Ion Implantation Equip. and Tech., Kingston, Canada, Jul. 1980.
N. Turner, "Improved Uniformity of Implanted Dose by a Compensated Scan Pattern Generator" in-house unpublished paper, Varian Associates, Extrion Division, Blackburn Industrial Park, Glouchester, Massachusetts 01930.

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