Scaled down select gates of NAND flash memory cell strings...

Details Scaled down select gates of NAND flash memory cell strings... Scaled down select gates of NAND flash memory cell strings...

2011-03-15

2011-03-15

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185130, C365S185260, C365S185330

Reexamination Certificate

active

07907448

ABSTRACT:
A NAND flash memory cell string having scaled down select gates. The NAND flash memory cell string includes a first select gate that has a width of 140 nm or less and a plurality of wordlines that are coupled to the first select gate. Gates associated with the plurality of wordlines are formed of p+ polysilicon. A second select gate that has a width of 140 nm or less is coupled to the plurality of wordlines.

REFERENCES:
patent: 7365018 (2008-04-01), Higashitani et al.
patent: 7636256 (2009-12-01), Gomikawa et al.
patent: 7671475 (2010-03-01), Kamigaichi et al.
patent: 2007/0243680 (2007-10-01), Harari et al.

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