Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-12-27
2005-12-27
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S050000, C257S209000, C257S529000, C438S131000, C438S467000, C438S600000, C438S647000
Reexamination Certificate
active
06979880
ABSTRACT:
Systems and methods are provided for a scalable high-performance antifuse structure and process that has a low RC component, a uniform dielectric breakdown, and a very low, effective dielectric constant (keff) such that a programming pulse voltage is scalable with Vdd. One aspect of the present subject matter is an antifuse device that is positioned or coupled between a first metal level and a second metal level. One embodiment of the antifuse device includes a porous antifuse dielectric layer, and at least one injector Silicon-Rich-Insulator (SRI) layer in contact with the porous antifuse dielectric layer. In one embodiment, the porous antifuse dielectric layer includes SiO2formed with air-filled voids. In one embodiment, the at least one injector SRI layer includes two injector Silicon-Rich-Nitride layers that sandwich the porous antifuse dielectric layer. Other aspects are provided herein.
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Bhattacharyya Arup
Geusic Joseph E.
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