Scalable high dielectric constant capacitor

Details Scalable high dielectric constant capacitor Scalable high dielectric constant capacitor

1997-11-19

1999-08-17

Niebling, John F.

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438393, 438396, H01L 2100

Patent

active

059406763

ABSTRACT:
A capacitor for high density DRAM applications comprises a high-.epsilon. capacitor dielectric such as BST or PZT in an arrangement which obviates the need for barrier layers during fabrication. The fabrication process allows for electrode placement by simple sputter deposition and further provides for the possibility of capacitor spacing below that of conventional lithographic techniques.

REFERENCES:
patent: 4145803 (1979-03-01), Tasch, Jr.
patent: 4481283 (1984-11-01), Kerr et al.
patent: 4890191 (1989-12-01), Rokos
patent: 5037773 (1991-08-01), Lee et al.
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5099305 (1992-03-01), Takenaka
patent: 5138411 (1992-08-01), Sandhu
patent: 5182232 (1993-01-01), Chhabra et al.
patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5217914 (1993-06-01), Matsumoto et al.
patent: 5223448 (1993-06-01), Su
patent: 5227855 (1993-07-01), Momose
patent: 5241201 (1993-08-01), Matsuo et al.
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5293510 (1994-03-01), Takenaka
patent: 5349494 (1994-09-01), Ando
patent: 5366920 (1994-11-01), Yamamichi et al.
patent: 5369296 (1994-11-01), Kato
patent: 5418180 (1995-05-01), Brown
patent: 5429972 (1995-07-01), Anjum et al.
patent: 5443688 (1995-08-01), Toure et al.
patent: 5444013 (1995-08-01), Akram et al.
patent: 5495117 (1996-02-01), Larson
patent: 5555486 (1996-09-01), Kingon et al.
patent: 5595928 (1997-01-01), Lu et al.
patent: 5612082 (1997-03-01), Azuma et al.
patent: 5696017 (1997-12-01), Ueno
patent: 5741722 (1998-04-01), Lee
"Hemispherical Grained Si Formation on in-situ Phosphorous Doped Amorphous-Si Electrode for 256Mb DRAM's Capacitor", Watanabe, et al., IEEE Transactions on Electron Devices, vol. 42, No. 7, Jul. 1995, pp. 1247-1254.
"Oxide Spacers", Multilevel-Interconnect Technology for VLSI and ULSI, vol. II pp. 212-214.
Matsuo, et al., "Spread-Vertical-Capacitor Cell (SVC) for High Density dRAM's," IEEE Transactions on Electron Devices, vol. 40, No. 4, Apr., 1993, pp. 750-754.

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