SC-2 based pre-thermal treatment wafer cleaning process

Details SC-2 based pre-thermal treatment wafer cleaning process SC-2 based pre-thermal treatment wafer cleaning process

1998-04-21

1999-08-03

Warden, Jill

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 3, 437235, 438756, B08B 312, C23G 102, H01L 2102

Patent

active

059320222

ABSTRACT:
Pre heat-treatment processing of a silicon wafer to grow a hydrophilic oxide layer includes an initial step of contacting the wafer with a pre-clean SC-1 bath, thereby producing a silicon wafer surface that is highly particle free. After a deionized water rinse, the wafer is scoured with an aqueous solution containing hydrofluoric acid and hydrochloric acid to remove metallic-containing oxide from the wafer surface. In order to grow a hydrophilic oxide layer, an SC-2 bath (containing hydrogen peroxide and a dilute concentration of metal-scouring HCl) is used. The resulting hydrophilic silicon oxide layer grown on the surface of the silicon wafer using the combined SC-1.fwdarw.HF/HCL.fwdarw.SC-2 wafer cleaning process has a metal concentration no greater than 1.times.10.sup.9. The diffusion length of minority carriers is increased from a range on the order of 500-600 microns to a range on the order of 800-900 microns.

REFERENCES:
patent: 5238500 (1993-08-01), Bergman
patent: 5486266 (1996-01-01), Tsai et al.
patent: 5516730 (1996-05-01), Saeed et al.
patent: 5681397 (1997-10-01), Li
patent: 5681398 (1997-10-01), Muraoka

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