Sb-based CMOS devices

Details Sb-based CMOS devices Sb-based CMOS devices

2006-11-16

2008-09-30

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257SE29103, C257SE29110, C257SE29190, C257SE29251, C257SE29254, C257S615000

Reexamination Certificate

active

07429747

ABSTRACT:
A group III-V material CMOS device may have NMOS and PMOS portions that are substantially the same through several of their layers. This may make the CMOS device easy to make and prevent coefficient of thermal expansion mismatches between the NMOS and PMOS portions.

REFERENCES:
patent: 5144378 (1992-09-01), Hikosaka
patent: 2007/0138565 (2007-06-01), Datta et al.
patent: 62-298181 (1987-12-01), None
patent: 02-246342 (1990-10-01), None
patent: 2003-53276 (2003-10-01), None
N.A. Papanicolaou. Sb-based HEMTs with InAlSb /InAs heterojunction. Electronics Letter. Sep. 12, 2005. vol. 41, No. 19.
Written Opinion PCT/US2007/082897 dated Oct. 29, 2007.

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