Saw devices including resistive films

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

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Details

310313C, 333151, 333195, H01L 414

Patent

active

046848410

ABSTRACT:
Each IDT (inter-digital transducer) of a SAW (surface acoustic wave) device is formed on a thin resistive doped silicon film having the same pattern as the IDT, which improves adhesion of the IDT to the substrate. The silicon film also constitutes electroacoustic absorbers between the IDTs and edges of the substrate, and can have a linearly tapered edge adjacent to each IDT to suppress reflections at the absorber boundary. The SAW device is formed by sputtering silicon onto the substrate, subsequently forming the IDTs, and then etching the silicon from areas where it is not wanted.

REFERENCES:
patent: 3760299 (1973-09-01), Vasile
patent: 4223286 (1980-09-01), Ono et al.
patent: 4450374 (1984-05-01), Cho et al.
patent: 4463327 (1984-07-01), Suzuki et al.

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