Saturation limiting system for a vertical, isolated collector PN

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357 44, 357 48, H01L 2972, H01L 2702, H01L 2704

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active

048871419

ABSTRACT:
The structure of a vertical PNP transistor with isolated collector is modified by forming a P-type diffusion outside the perimeter of a sinker collector diffusion to form an auxiliary collector capable of detecting the injection of current toward the substrate when the integrated transistor saturates. The current gathered by said auxiliary collector is used for activating a saturation limiting circuit formed by an NPN transistor which is switched-on when said said current gathered by said auxiliary collector reaches a threshold value and which in turn switches-on a PNP transistor having an emitter and a collector connected respectively to the emitter and to the base of the PNP vertical transistor with isolated collector for reducing the driving base current thereto.

REFERENCES:
patent: 3502951 (1970-03-01), Hunts
patent: 3930909 (1976-01-01), Schmitz et al.
patent: 4038680 (1977-07-01), Yagi et al.
patent: 4291319 (1981-09-01), Carinalli
patent: 4394625 (1983-07-01), Sakai
patent: 4476480 (1984-10-01), Fuse

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