Saturable Bragg reflector structure and process for fabricating

Coherent light generators – Particular resonant cavity – Specified cavity component

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372 18, 372 98, 372 92, 372 21, 437 51, 437126, 437129, 257 18, 359248, H01S 308, H01L 2120, H01L 2906, G02F 103

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057013276

ABSTRACT:
Low optical loss and simplified fabrication are achieved by a nonlinear reflector which incorporates one or more semiconductor quantum wells within an n half-wavelengths strain relief layer (where n is an odd integer greater than zero) that is formed on a standard semiconductor quarter wave stack reflector. Growth of the half-wavelength layer is controlled so that dislocations are formed in sufficient concentration at the interface region to act effectively as non-radiative recombination sources. After saturation, these recombination sources remove carriers in the quantum well before the next round trip of the optical pulse arrives in the laser cavity. The nonlinear reflector is suitable for laser modelocking at the high wavelengths associated with many currently contemplated telecommunications applications and provides, at such wavelengths, an intensity dependent response that permits it to be used for saturable absorption directly in a main oscillating cavity of a laser. Saturation intensity of the nonlinear reflector and thereby related laser modelocking properties can be controlled by disposing the quantum well(s) at a particular position within the strain relief layer.

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