Saturable absorber component and method for manufacturing a...

Metal fusion bonding – Process – Diffusion type

Reexamination Certificate

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Reexamination Certificate

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07900810

ABSTRACT:
This invention relates to a saturable absorber component comprising an absorbent material located between a front mirror and a rear mirror as well as a method for manufacturing a saturable absorber component. The metallic rear mirror is a metallic buried mirror fixed via a welding joint on a heat conductive substrate. The invention applies to the field of high-rate optical transmission.

REFERENCES:
patent: 5493577 (1996-02-01), Choquette et al.
patent: 5658418 (1997-08-01), Coronel et al.
patent: 5835521 (1998-11-01), Ramani et al.
patent: 6002704 (1999-12-01), Freitag et al.
patent: 6061378 (2000-05-01), Marshall et al.
patent: 2002/0093108 (2002-07-01), Grigorov
patent: 2002/0150129 (2002-10-01), Coldren et al.
patent: 2003/0184837 (2003-10-01), Marceaux et al.
patent: 199952675 (2000-04-01), None
patent: 0 736 791 (1996-10-01), None
patent: 1 122 582 (2001-08-01), None
patent: 9-244075 (1997-09-01), None
patent: 10-117016 (1998-05-01), None
patent: 10-142569 (1998-05-01), None
patent: 2000-111965 (2000-04-01), None
patent: 2001-215542 (2001-08-01), None
patent: 2004-503803 (2004-02-01), None
patent: 01/59895 (2001-08-01), None
patent: 01/67563 (2001-09-01), None
patent: WO 02/05016 (2002-01-01), None
U. Keller, et al., “Solid-state low-loss intracavity saturable absorber for Nd: YLF lasers: an antiresonant semiconductor fabry-perot saturable absorber”, Optics Letter, vol. 17, No. 7, pp. 505-507, Apr. 1992.
Ryo Takahashi, “Low-temperature-grown surface-reflection all-optical switch (LOTOS)”, Optical and Quantum Electronics, No. 33, pp. 999-1017, Oct. 2001.
Leonard Berstein, “Semiconductor joining by the solid-liquid-interdiffusion (SLID) process”, Journal of the Electrochemical Society, vol. 113, No. 12, pp. 1282-1288, 1996.
Chin C. Lee, et al. “Au-In bonding below the eutectic temperature” IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. 16, No. 3, pp. 311-316, May 1, 1993.
J. Mangeney et al., “Ultrafast saturable absorption at 1.55 mu m in heavy-ion-irradiated quantum-well vertical cavity”, Appl. Phys. Lett. 76, Mar. 2000, p. 1371-1373.
Zhigang Zhang et al., “Low-loss broadband semiconductor saturable absorber mirror for mode-locked Ti: sapphire lasers”, Optics Communications vol. 176, Issues 1-3, Mar. 15, 2000, pp. 171-175 (http://www.sciencedirect.com/science/article/B6TVF-3YSXR7).

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