Sapphire single crystal substrate for semiconductor devices

Details Sapphire single crystal substrate for semiconductor devices Sapphire single crystal substrate for semiconductor devices

1975-10-24

1978-11-21

Smith, John D.

Stock material or miscellaneous articles

Composite

Of silicon containing

106 42, 106 7333, 106 734, 156608, 156612, 156617SP, 156DIG61, 252 635, 423600, 428539, C04B 3546

Patent

active

041267311

ABSTRACT:
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminium oxide) and at least one additive selected from a group consisting of oxides of gallium, titanium, scandium, and others. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.

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Edel, Stacking Fault Free Epitaxial Layers, IBM Tech. Dis. Bull., vol. 14, No. 5, p. 1654, (10-1971).
Edel et al., Stress Relief by Counter Doping, IBM Tech. Disclosure Bull., vol. 13, No. 3, p. 632, (8-1970).

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