Sapphire single crystal substrate for semiconductor devices

Details Sapphire single crystal substrate for semiconductor devices Sapphire single crystal substrate for semiconductor devices

1980-05-19

1981-09-29

Smith, John D.

Stock material or miscellaneous articles

Composite

Of silicon containing

148 33, 156DIG61, 428697, 428700, 501 86, C04B 3546, C30B 2920, C30B 2932

Patent

active

042923735

ABSTRACT:
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consists essentially of sapphire (aluminum oxide) and magnesium titanium oxide (MgTiO.sub.3). The invention also provides the aforesaid single crystal substrate in combination with a semiconductor epitaxially grown thereon. The preferred semiconductors are silicon, gallium phosphide, aluminum phosphide and zinc sulphide.

REFERENCES:
patent: 3608050 (1971-09-01), Carman et al.
patent: 3990902 (1976-11-01), Nishizawa et al.
patent: 4126731 (1978-11-01), Nishizawa et al.
patent: 4177321 (1979-12-01), Nishizawa

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