Sapphire single crystal substrate consisting essentially of Ga.s

Details Sapphire single crystal substrate consisting essentially of Ga.s Sapphire single crystal substrate consisting essentially of Ga.s

1982-02-22

1982-06-08

Smith, John D.

Stock material or miscellaneous articles

Composite

Of silicon containing

428700, 501 86, 501153, C30B 2920

Patent

active

043339891

ABSTRACT:
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminum oxide) and at least one additive selected from a group consisting of oxides of gallium. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.

REFERENCES:
patent: 3075831 (1963-01-01), Remeika
patent: 4039726 (1977-08-01), Carr
patent: 4177321 (1979-12-01), Nishizawa

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