Sapphire single crystal substrate consisting essentially of Ga.s

Stock material or miscellaneous articles – Composite – Of silicon containing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

428700, 501 86, 501153, C30B 2920

Patent

active

043339891

ABSTRACT:
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminum oxide) and at least one additive selected from a group consisting of oxides of gallium. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.

REFERENCES:
patent: 3075831 (1963-01-01), Remeika
patent: 4039726 (1977-08-01), Carr
patent: 4177321 (1979-12-01), Nishizawa

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Sapphire single crystal substrate consisting essentially of Ga.s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sapphire single crystal substrate consisting essentially of Ga.s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sapphire single crystal substrate consisting essentially of Ga.s will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-553228

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.