Sapphire/gallium nitride laminate having reduced bending...

Details Sapphire/gallium nitride laminate having reduced bending... Sapphire/gallium nitride laminate having reduced bending...

2008-01-01

2008-01-01

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S631000, C257SE33001, C257SE33034

Reexamination Certificate

active

07315045

ABSTRACT:
The present invention relates to a sapphire/gallium nitride laminate, wherein a curvature radius thereof is positioned on the right side of a first curve plotted from the following functional formula (I):in-line-formulae description="In-line Formulae" end="lead"?Y=Y0+A·e−(x−1)/T  (I)in-line-formulae description="In-line Formulae" end="tail"?wherein Y is the curvature radius (m) of a sapphire/gallium nitride laminate, X is the thickness (μm) of a gallium nitride film, Y0is 5.47±0.34, A is 24.13±0.50, and T is 0.56±0.04. The inventive laminate can be advantageously used in the manufacture of a high quality electronic device.

REFERENCES:
patent: 6528394 (2003-03-01), Lee
patent: 6824610 (2004-11-01), Shibata et al.
patent: 6829270 (2004-12-01), Suzuki et al.

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