Sample separating apparatus and method, and substrate...

Details Sample separating apparatus and method, and substrate... Sample separating apparatus and method, and substrate...

2004-10-12

2009-08-25

Osele, Mark A (Department: 1791)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Reexamination Certificate

active

07579257

ABSTRACT:
This invention is to provide a technique of separating bonded substrate stacks having porous layers at a high yield. A separating apparatus (100) has a pair of substrate holding portions (270, 280). A bonded substrate stack (50) is sandwiched from upper and lower sides and horizontally held by the substrate holding portions (270, 280) and rotated. A jet is ejected from a nozzle (260) and injected into the porous layer of the bonded substrate stack (50), thereby separating the bonded substrate stack (50) into two substrates at the porous layer. Another separating apparatus (5000) has a pair of substrate holding portions (270, 280), a nozzle (260) of rejecting a fluid to the porous layer of a bonded substrate stack (50), and an abrupt operation prevention mechanism (4000) for preventing the lower substrate holding portion (280) from abruptly moving downward but allowing it to moderately move when separating the bonded substrate stack (50).

REFERENCES:
patent: 2191513 (1940-02-01), Bigelow
patent: 2517394 (1950-08-01), Tellier
patent: 3094207 (1963-06-01), Millhiser et al.
patent: 3489608 (1970-01-01), Jacobs et al.
patent: 3493155 (1970-02-01), Litant et al.
patent: 3549446 (1970-12-01), Bennett et al.
patent: 3667661 (1972-06-01), Farmer
patent: 3730410 (1973-05-01), Altshuler
patent: 3970471 (1976-07-01), Bankes et al.
patent: 4047973 (1977-09-01), Williams
patent: 4208760 (1980-06-01), Dexter et al.
patent: 4215928 (1980-08-01), Bayley et al.
patent: 4850381 (1989-07-01), Moe et al.
patent: 4887904 (1989-12-01), Nakazato et al.
patent: 4915564 (1990-04-01), Eror et al.
patent: 4962879 (1990-10-01), Goesele et al.
patent: 4985722 (1991-01-01), Ushijima et al.
patent: 5100544 (1992-03-01), Izutani et al.
patent: 5248886 (1993-09-01), Asakawa et al.
patent: 5255853 (1993-10-01), Munoz
patent: 5292393 (1994-03-01), Maydan et al.
patent: 5357645 (1994-10-01), Onodera
patent: 5374564 (1994-12-01), Bruel
patent: 5379235 (1995-01-01), Fisher et al.
patent: 5447596 (1995-09-01), Hayase
patent: 5510019 (1996-04-01), Yabumoto et al.
patent: 5570994 (1996-11-01), Somekh et al.
patent: 5653247 (1997-08-01), Murakami
patent: 5679405 (1997-10-01), Thomas et al.
patent: 5697405 (1997-12-01), Dornier et al.
patent: 5700127 (1997-12-01), Harada et al.
patent: 5746565 (1998-05-01), Tepolt
patent: 5747387 (1998-05-01), Koizumi et al.
patent: 5783022 (1998-07-01), Cha et al.
patent: 5792709 (1998-08-01), Robinson et al.
patent: 5795401 (1998-08-01), Itoh et al.
patent: 5803932 (1998-09-01), Akimoto et al.
patent: 5810028 (1998-09-01), Ichikawa et al.
patent: 5811348 (1998-09-01), Matsushita et al.
patent: 5820329 (1998-10-01), Derbinski et al.
patent: 5849602 (1998-12-01), Okamura et al.
patent: 5876497 (1999-03-01), Atoji
patent: 5928389 (1999-07-01), Jevtic
patent: 5934856 (1999-08-01), Asakawa
patent: 5954888 (1999-09-01), Gupta et al.
patent: 5994207 (1999-11-01), Henley et al.
patent: 6007675 (1999-12-01), Toshima
patent: 6058945 (2000-05-01), Fujiyama et al.
patent: 6092578 (2000-07-01), Machida et al.
patent: 6122566 (2000-09-01), Nguyen et al.
patent: 6131589 (2000-10-01), Vogtmann et al.
patent: 6168499 (2001-01-01), Jang
patent: 6221740 (2001-04-01), Bryan et al.
patent: 6277234 (2001-08-01), Freund et al.
patent: 6321134 (2001-11-01), Henley et al.
patent: 6382292 (2002-05-01), Ohmi et al.
patent: 6391740 (2002-05-01), Cheung et al.
patent: 6418999 (2002-07-01), Yanagita et al.
patent: 6507187 (2003-01-01), Olivas et al.
patent: 6527031 (2003-03-01), Yanagita et al.
patent: 6534383 (2003-03-01), Iwane et al.
patent: 6672358 (2004-01-01), Yanagita et al.
patent: 6827809 (2004-12-01), Anker
patent: 6884694 (2005-04-01), Park et al.
patent: 2004/0166653 (2004-08-01), Kerdiles et al.
patent: 0560439 (1993-09-01), None
patent: 0 709 876 (1996-05-01), None
patent: 0798762 (1997-10-01), None
patent: 0837494 (1998-04-01), None
patent: 0 840 381 (1998-05-01), None
patent: 0 843 345 (1998-05-01), None
patent: 0843340 (1998-05-01), None
patent: 0 867 917 (1998-09-01), None
patent: 0 886 300 (1998-12-01), None
patent: 0 926 719 (1999-06-01), None
patent: 0 999 578 (2000-05-01), None
patent: 1 026 729 (2000-08-01), None
patent: 1 045 448 (2000-10-01), None
patent: 56-30650 (1981-03-01), None
patent: 60-5530 (1985-01-01), None
patent: A60-005530 (1985-12-01), None
patent: 63-16455 (1988-01-01), None
patent: 4-293236 (1992-10-01), None
patent: 5-21338 (1993-01-01), None
patent: 7-302889 (1995-11-01), None
patent: 9-8095 (1997-01-01), None
patent: 9-167724 (1997-06-01), None
patent: 10-064870 (1998-03-01), None
patent: 10-270533 (1998-10-01), None
patent: 10-284403 (1998-10-01), None
patent: 1998-33377 (1998-07-01), None
patent: WO 98/02911 (1998-01-01), None
patent: WO 99/06110 (1999-02-01), None
patent: WO 99/06110 (1999-11-01), None
patent: WO 01/04933 (2001-01-01), None
patent: WO 01/10644 (2001-02-01), None
EPO Search Report issued Jul. 8, 2004, for counterpart application EP 99308761.8.
“Single-Crystal Silicon on Non-Single-Crystal Insulators”, G.W. Cullen,Journal of Crystal Growth, vol. 63, No. 3, pp. 429-590, 1983.
“Crystalline Quality of Silicon Layer Formed by FIPOS Technology”, Kazuo Imai et al.,Journal of Crystal Growth, vol. 63, pp. 547-553, 1987.
“Silicon-On-Insulator by Wafer Bonding: A Review”, W.P. Maszara,Journal of Electrochemical Society, vol. 138, pp. 341-347, 1991.
“Light Scattering Topography Characterization of Bonded SOI Wafer”, H. Baumgart, et al.,Extended Abstracts, vol. 91-2, pp. 733-734, 1991.
“Thinning of Bonded Wafer: Etch-Stop Approaches”, Charges E. Hunt et al.,Extended Abstracts, vol. 91-2, pp. 696-697, 1991.
“Epitaxial Layer Transfer by Bond and Etch Back of Porous Si”, Takano Yonehara et al.,Applied Physics Letters, vol. 64, pp. 2108-2110, 1994.
“Electrolytic Shaping of Germanium and Silicon”, A. Uhlir et al.,Bell System Technical Journal, vol. 35, pp. 333-347, 1956.
“Oxidized Porous Silicon and It's Application”, K. Nagano et al.,The Transactions of the Institute of Electronics and Communication Engineets, The Institute of Electronics, Information and Communication engineers, vol. 79, pp. 49-54, SSD 79-9549, 1979.
“A New Dielectric Isolation Method Using Porous Silicon”, K. Imai,Solid-State Electronics, vol. 224, pp. 159-164, 1981.
“Silicon on Insulator Material by Wafer Bonding”, Christine Harendt, Charles E. Hunt e al.,Journal of Electronic Materials, vol. 20, pp. 267-277, 1991.
Michael Bruel, et al. “Smart-Cut: A New Silicon On Insulator Material Technology Based On Hydrogen Implantation And Wafer Bonding”,Jpn. J. Appl. Phys. vol. 36, No. 3B, Part 01, Mar. 1, 1997, pp. 1636-1641.
“Water Jet”, vol. 1, No. 1, p. 4 (1984).
Patent Abstracts of Japan, 09-167724; Jun. 24, 1997.
English Abstract for JPA 56-30650.
Office Action dated Jan. 14, 2003 from corresponding Korean Patent Application No. 10-1999-0049123.
Chinese Office Action dated Jun. 20, 2003 in counterpart application No. 99123433.2.
A communication for European Application No. 2689130 dated Nov. 18, 2004.
A communication for European Application No. 2689430 dated Nov. 23, 2004.
A communication for European Application No. 2689530 dated Nov. 25, 2004.
Japanese Office Action dated Oct. 17, 2008, issued on JP Patent Application No. 10-316575, which is a counterpart application of U.S. Appl. No. 09/434,741, of which the present application claims domestic priority.

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