Salicide recessed local oxidation of silicon

Details Salicide recessed local oxidation of silicon Salicide recessed local oxidation of silicon

1993-05-07

1993-10-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 69, 437 72, 437200, H01L 71302

Patent

active

052544958

ABSTRACT:
A new method of local oxidation using a salicide recessed oxidation process is described. A thin silicon oxide layer is formed over the surface of a silicon substrate. A layer of silicon nitride is deposited overlying the silicon oxide layer. The silicon oxide and silicon nitride layers are patterned to provide openings exposing portions of the silicon substrate that will be oxidized subsequently. A metal layer is deposited overlying the silicon nitride layer and within the openings to the substrate. Channel-stops are ion implanted into the substrate through the openings. The salicide is formed by reacting the metal layer with the silicon substrate where the metal layer contacts the substrate within the openings. The metal silicide regions are removed, leaving recesses in the silicon surface within the openings. Field oxide regions are grown within the openings. Finally, the silicon nitride and silicon oxide layers are removed thereby completing local oxidation of the integrated circuit.

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patent: 5137843 (1992-08-01), Kim et al.
patent: 5139964 (1992-08-01), Onishi et al.

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