Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2005-07-12
2005-07-12
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
Reexamination Certificate
active
06916729
ABSTRACT:
A method of forming a salicide on a semiconductor device includes depositing a first refractory metal layer over a silicon region of a substrate, depositing a near-noble metal layer over the first refractory metal layer, and depositing a second refractory metal layer over the near-noble metal layer. The semiconductor device is annealed in a first annealing process to form a silicide layer abutting the doped region of the semiconductor device. Un-reacted portions of the near-noble metal layer and the second refractory metal layer are removed. The device may be annealed in an optional second annealing process to convert the silicide layer to a low resistance phase silicide material. Junction leakage and bridging are minimized or eliminated by embodiments of the present invention, and a smoother silicided surface is achieved.
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Agnello Paul D.
Clevenger Lawrence A.
DeHaven Patrick W.
Dziobkowski Chester T.
Fang Sunfei
Fourson George
Infineon - Technologies AG
Kebede Brook
Slater & Matsil L.L.P.
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