1988-08-10
1990-04-17
Edlow, Martin H.
357 16, 357 60, H01L 2712
Patent
active
049184938
ABSTRACT:
A composite buffer layer is formed with a layer of GaAs on a semi-insulating GaAs substrate. Next a short period superlattice is formed followed by another GaAs layer. A layer of GaAlAs is then provided such that the Ai content and no doping followed by an intrinsic GaAs layer. The intrinsic GaAs layer is the active layer which serves as a channel.
REFERENCES:
patent: 4088515 (1978-05-01), Blakeslee
patent: 4607272 (1986-08-01), Osbourn
Delalande, Appl. Phys. Lett. (51)(17), Oct. 26, 1987.
Balzan Matthew L.
Geissberger Arthur E.
Menk Gregory E.
Sadler Robert A.
Edlow Martin H.
ITT Corporation
Twomey Thomas N.
Werner Mary C.
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