Sacrificial substrate for etching

Details Sacrificial substrate for etching Sacrificial substrate for etching

2005-10-21

2009-11-24

Vinh, Lan (Department: 1792)

Etching a substrate: processes

Adhesive or autogenous bonding of two or more...

Etching improves or promotes adherence of preforms being bonded

C216S020000, C216S059000, C216S067000

Reexamination Certificate

active

07622048

ABSTRACT:
A method of etching a silicon substrate is described. The method includes bonding a first silicon substrate to a sacrificial silicon substrate. The first silicon substrate is etched. A pressure is applied at an interface of the first silicon substrate and the sacrificial silicon substrate to cause the first silicon substrate to separate from the sacrificial silicon substrate. An apparatus having metal blades can be used to separate the substrates.

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Communication pursuant to Article 94(3) EPC, Jul. 1, 2009, European Patent Office (office action issued in corresponding European application No. 05851235.1).

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