Sacrificial protective layer for image sensors and method of...

Details Sacrificial protective layer for image sensors and method of... Sacrificial protective layer for image sensors and method of...

2006-08-15

2006-08-15

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S107000

Reexamination Certificate

active

07091058

ABSTRACT:
A method for protecting an image sensor die is disclosed. The method comprises forming a plurality of image sensor die having micro-lenses onto a semiconductor wafer. Then, a protective layer is formed over the image sensor die. After the protective layer has been formed, and without any removal step of the protective layer, the wafer is diced to separate the plurality of image sensor die. Finally, the image sensor die are mounted onto an integrated circuit package and the protective layer is removed.

REFERENCES:
patent: 5479049 (1995-12-01), Aoki et al.
patent: 6617189 (2003-09-01), Chen et al.
patent: 2002/0148946 (2002-10-01), Tu et al.
patent: 2004/0082094 (2004-04-01), Yamamoto
patent: 2004/0135919 (2004-07-01), Kim et al.

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