Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Patent
1998-06-12
2000-07-11
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
257620, 257 48, 438401, 438462, 438692, H01L 23544, H01L 2176, H01L 21301, H01L 21302
Patent
active
060877332
ABSTRACT:
A method and apparatus for compensating for the effects of nonuniform planarization in chemical-mechanical polishing (CMP) such as the erosion occurring from the removal of titanium nitride/tungsten films is disclosed. In the context of alignment marks, dummy marks are disposed on both sides of the actual alignment marks providing a similar feature density as the alignment marks. During the CMP, the dummy marks reside in the area of nonuniform erosion, leaving the actual marks in an area of uniform erosion. The present invention may also be used to control underlayer erosion variations in the high feature density device areas adjacent to the low feature density open areas by providing dummy features in the low feature density areas.
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Cadien Kenneth C.
Hsieh Ning
Kocsis Michael
Maxim Michael A.
Prince Matthew
Hardy David
Intel Corporation
Wilson Allan R.
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