Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2004-01-30
2009-10-06
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S042000, C438S274000, C438S399000, C257SE25008
Reexamination Certificate
active
07598114
ABSTRACT:
A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.
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Foster Kenneth L.
Kirchhoff Robert A.
Li Youngfu
Niu Jason Q.
Dow Global Technologies Inc.
Louie Wai-Sing
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