Sacrificial annealing layer for a semiconductor device and a...

Details Sacrificial annealing layer for a semiconductor device and a... Sacrificial annealing layer for a semiconductor device and a...

2006-10-03

2006-10-03

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S591000, C438S624000, C438S663000

Reexamination Certificate

active

07115479

ABSTRACT:
Numerous embodiments of a method and apparatus for a sacrificial annealing layer are disclosed. In one embodiment, a method of forming a sacrificial annealing layer for a semiconductor device comprises forming one or more sacrificial layers on at least a portion of the top surface of a semiconductor device, annealing at least a portion of the device, and removing a substantial portion of the one or more sacrificial layers, where the removing results in no substantial physical alterations to the device.

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