Electric heating – Metal heating – By arc
Reexamination Certificate
2005-03-01
2005-03-01
Evans, Geoffrey S. (Department: 1725)
Electric heating
Metal heating
By arc
C438S166000, C438S487000
Reexamination Certificate
active
06861614
ABSTRACT:
In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20′) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm−2and can provide a silicon-insulating film interface exhibiting a low interface state density.
REFERENCES:
patent: 4370026 (1983-01-01), Dubroeucq et al.
patent: 5304250 (1994-04-01), Sameshima et al.
patent: 5432122 (1995-07-01), Chae
patent: 5477304 (1995-12-01), Nishi
patent: 5699191 (1997-12-01), Fork
patent: 5923475 (1999-07-01), Kurtz et al.
patent: 5932118 (1999-08-01), Yamamoto et al.
patent: 6071765 (2000-06-01), Noguchi et al.
patent: 6072631 (2000-06-01), Guenther et al.
patent: 6117752 (2000-09-01), Suzuki
patent: 6160827 (2000-12-01), Tanaka
patent: 6242291 (2001-06-01), Kusumoto et al.
patent: 6304385 (2001-10-01), Tanaka
patent: 6437313 (2002-08-01), Yamazaki et al.
patent: 6451636 (2002-09-01), Segawa et al.
patent: 6471772 (2002-10-01), Tanaka
patent: 57-181537 (1982-11-01), None
patent: 10-97083 (1989-04-01), None
patent: 5-21393 (1993-01-01), None
patent: 5-909191 (1993-04-01), None
patent: 5-129183 (1993-05-01), None
patent: 5-182923 (1993-07-01), None
patent: 5-211167 (1993-08-01), None
patent: 6-310407 (1994-04-01), None
patent: 6-232030 (1994-08-01), None
patent: 6-267826 (1994-09-01), None
patent: 6-267826 (1994-09-01), None
patent: 7-078759 (1995-03-01), None
patent: 7-99321 (1995-04-01), None
patent: 7-130721 (1995-05-01), None
patent: 7-142331 (1995-06-01), None
patent: 7-266064 (1995-10-01), None
patent: 7-283110 (1995-10-01), None
patent: 7-118443 (1995-12-01), None
patent: 8-55795 (1996-02-01), None
patent: 8-111449 (1996-04-01), None
patent: 8-192287 (1996-07-01), None
patent: 9-7911 (1997-01-01), None
patent: 9-17729 (1997-01-01), None
patent: 9-148246 (1997-06-01), None
patent: 9-283423 (1997-10-01), None
patent: 10-041513 (1998-02-01), None
patent: 10-116989 (1998-05-01), None
patent: 10-149984 (1998-06-01), None
patent: 10-209029 (1998-08-01), None
patent: 11-17185 (1999-01-01), None
patent: 11-143087 (2002-01-01), None
patent: 1998-24115 (1998-06-01), None
patent: 1999-0045161 (1999-06-01), None
Crystalline Si Films for Integrated Actrive-Matrix Liquid-Crstal Displays, James S. Im and Robert S. Sposili, Mrs Bulletin, Mar. 1996, pp. 39-48.
Sequential Lateral Solidification of Thin Silicon Films on SiO2,Robert S. Sposili and James S. Im, Appl. Phys. Lett. 69 (19), Nov. 4, 1996, pp. 2864-2866.
Single-crystal Si Films for Thin-Film transistor Devices, James S. Im, Robert S. Sposili, and M.A. Crowder, Appl. Phys. Lett. 70 (25), Jun. 23, 1997, American Institute of Physics, p. 3434-3436.
Effects of Light Pulse Duratio on Excimer-Laser Crystallization Characteristics of Silicon Thin Films, Ishihara, Yeh, Hattori and Matsumura, Jpn. J. Appl. Phys. vol. 34 (1995) pp. 1759-1764, p. 1, No. 4A, Apr. 1995.
Improvement of structural and electrical properties in low-temperature gate oxides for poly-Si TFTs by controlling O2/SiH4 ratios, Yuda, Tanabe and Okumura, AM-LCD 97, The Japan Society of Applied Physics, Digest of Technical Papers, 1997, International Workshop on Active-Matrix Liquid-Crystal Displays—TFT Technologies and Related Materials—Sep. 11-12, 1997, Kogakuin University, Tokyo, Japan, pp. 87-89.
Excimer Laser Crystallization of Amorphous Silicon Films, Tanabe, Sera, Nakamura, Hirata, Yuda and Okumura, reprinted from the NEC Research & Development, Vo. 35, No. 3, pp. 254-260, Jul. 1994.
The Properties of Gases and Liquids, Robert C. Reid, John M. Prausnitz, Bruce E. Poling, Fourth Edition, Cover, Contents Page, Appendix B, p. 734, and Index page.
Transport Phenomena, Department of Chemical Engineering, Univesity of Wisconsin, Madison, Wisconsin, Preface, pp. 508-513, Table B-2, and Appendix C (p. 747).
Akashi Tomoyuki
Tanabe Hiroshi
Watabe Yoshimi
Anelva Corporation
Evans Geoffrey S.
Hayes & Soloway P.C.
NEC Corporation
Sumitomo Heavy Industrie's, Ltd.
LandOfFree
S system for the formation of a silicon thin film and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with S system for the formation of a silicon thin film and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and S system for the formation of a silicon thin film and a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3371198