Rutile single crystals and their growth processes

Details Rutile single crystals and their growth processes Rutile single crystals and their growth processes

1994-01-18

1995-07-11

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 23, 117209, 117937, C30B 1534

Patent

active

054311241

ABSTRACT:
A rutile single crystal with no grain boundaries of large inclination is obtained by an EFG crystal growth process wherein a die provided with slits is incorporated in a feed melt 2 to deliver up the melt through the slits until it reaches the upper face of the die, thereby obtaining a single crystal conforming in configuration to the die by pulling growth.

REFERENCES:
patent: 3650703 (1972-03-01), Labelle, Jr. et al.
patent: 3826625 (1974-07-01), Bailey
patent: 3870477 (1975-03-01), Labelle, Jr.
patent: 4099924 (1978-07-01), Berkman et al.
patent: 4184907 (1980-01-01), Yates
patent: 4213940 (1980-07-01), Zerbst
patent: 4944925 (1990-07-01), Yamauchi et al.
English Abstract of Japan Publication No. JP62091487, "Production of Dielectric Single Crystal" (Japan Publication Date Apr. 25, 1987).
Applied Physics, vol. 46, No. 9, pp. 938-942 (1977).
Nassau, Journal of the American Ceramic Society, vol. 45, No. 10, pp. 474-478 (1962).

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