Ruthenium layer formation for copper film deposition

Details Ruthenium layer formation for copper film deposition Ruthenium layer formation for copper film deposition

2007-09-04

2007-09-04

Meeks, Timothy (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

C427S255230, C427S255700

Reexamination Certificate

active

10634662

ABSTRACT:
A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and a reducing gas on a substrate structure. The adsorbed ruthenium-containing precursor reacts with the adsorbed reducing gas to form the ruthenium layer on the substrate.

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