Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Patent
1998-09-03
2000-11-07
Gulakowski, Randy
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
216108, 252 791, 134 2216, C23F 144
Patent
active
061431923
ABSTRACT:
A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.
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Gulakowski Randy
Micro)n Technology, Inc.
Olsen Allan
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