RuO 0.8 electrode and structure

Details RuO 0.8 electrode and structure RuO 0.8 electrode and structure

2011-04-12

2011-04-12

Thomas, Eric (Department: 2835)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S311000

Reexamination Certificate

active

07924547

ABSTRACT:
A structure including a TiW oxygen plasma mask, a photoresist mask above and in contact with the TiW oxygen plasma mask, a 2000 angstrom thick oxygen plasma vaporizable RuO0.8electrode layer partially under and in contact with the TiW oxygen plasma mask, the RuO0.8electrode layer not being completely covered by a pattern of the TiW oxygen plasma mask, a first side of a PZT ferroelectric layer in contact with the RuO0.8electrode layer and a second RuO0.8electrode layer in contact with a second side of the PZT ferroelectric layer.

REFERENCES:
patent: 5135608 (1992-08-01), Okutani
patent: 5358889 (1994-10-01), Emesh et al.
patent: 5443688 (1995-08-01), Toure
patent: 6316797 (2001-11-01), Van Buskirk et al.
patent: 6943039 (2005-09-01), Ying et al.
patent: 6984417 (2006-01-01), Van Buskirk et al.
patent: 2001/0013614 (2001-08-01), Joshi et al.
patent: 2001/0019874 (2001-09-01), Uemoto et al.
patent: 2002/0130420 (2002-09-01), Tang
patent: 2008/0049379 (2008-02-01), Van Buskirk et al.
patent: 2008/0121953 (2008-05-01), Summerfelt

Affiliated with

Also associated with

Rating

RuO 0.8 electrode and structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RuO 0.8 electrode and structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RuO 0.8 electrode and structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2739156