Abrading – Precision device or process - or with condition responsive... – Computer controlled
Reexamination Certificate
2007-09-04
2007-09-04
Rose, Robert A. (Department: 3723)
Abrading
Precision device or process - or with condition responsive...
Computer controlled
C451S041000
Reexamination Certificate
active
10831592
ABSTRACT:
During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.
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Chadi El Chemali et al., Multizone Uniformity Control of a Chemical Mechanical Polishing Process Utilizing a Pre and Post-Measurement Strategy, Journal of Vacuum Science and Technology A 18, No. 4 (Jul./Aug. 2000); 1287-1296, pp. 1-28.
Jiyoun Kim et al., “Gradient and Radial Uniformity Control of a CMP Process Utilizing a Pre-and Post- Measurement Strategy”, Proceedings of the Fifth Int'l Chemical Planarization of ULSI Multilevel Interconnection Conference (CMP-MIC) (Tampa, FL: IMIC, 2000), 215-221, 8 pages.
Anthony J. Toprac, “Development and implanting an advanced CMP run-to-run controller”, Micro Magazine, Aug./Sep. 2003, 8 pages.
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Guthrie Hung-Chin
Jiang Ming
Wong Yeak-Chong
Hitachi Global Storage Technologies - Netherlands B.V.
Rose Robert A.
Silicon Valley Patent & Group LLP
Suryadevara Omar K.
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