Run-to-run control method for automated control of metal...

Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S005000

Reexamination Certificate

active

07324865

ABSTRACT:
A method is provided, the method comprising monitoring consumption of a sputter target to determine a deposition rate of a metal layer during metal deposition processing using the sputter target, and modeling a dependence of the deposition rate on at least one of deposition plasma power and deposition time. The method also comprises applying the deposition rate model to modify the metal deposition processing to form the metal layer to have a desired thickness.

REFERENCES:
patent: 4166783 (1979-09-01), Turner
patent: 5665214 (1997-09-01), Iturralde
patent: 6178390 (2001-01-01), Jun
patent: 6217720 (2001-04-01), Sullivan et al.
patent: 6324439 (2001-11-01), Cheung et al.
Smith, T.H., Boning, D.S., Stefani, J. and Butler, S.W. “Run by Run Advanced Process Control of Metal Sputter Deposition”. IEEE Transactions on Semiconductor Manufacturing 11.2 (1998): 276-284.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Run-to-run control method for automated control of metal... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Run-to-run control method for automated control of metal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Run-to-run control method for automated control of metal... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2771933

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.