RTP lamp design for oxidation and annealing

Details RTP lamp design for oxidation and annealing RTP lamp design for oxidation and annealing

1996-11-26

1998-06-09

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

392411, 392418, 392422, C23L 1600

Patent

active

057627134

ABSTRACT:
A RTP system and method. A first lamp zone (108) is located around a periphery of a wafer (102) for heating the center of the wafer (102) and a second lamp zone (114) is located around the periphery of the wafer (102) for heating the edge of the wafer (102). The chamber (104) includes highly reflective surfaces (106). Light from the first and second lamp zones (108, 114) is reflected off of the highly reflective surfaces (106) at least three time before reaching the wafer (102). Thus, the wafer (102) is isotropically heated and uniform wafer heating is achieved.

REFERENCES:
patent: 4956538 (1990-09-01), Moslehi
patent: 5418885 (1995-05-01), Hauser
Websters 3.sup.rd New International Dictionary, Merriam-Webster, Springfield Mass, 1993, p. 1681.

Affiliated with

Also associated with

Rating

RTP lamp design for oxidation and annealing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RTP lamp design for oxidation and annealing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RTP lamp design for oxidation and annealing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2194636