Static information storage and retrieval – Addressing – Particular decoder or driver circuit
Patent
1996-04-18
1998-02-17
Nelms, David C.
Static information storage and retrieval
Addressing
Particular decoder or driver circuit
36518911, 326106, G11C 800
Patent
active
057198187
ABSTRACT:
A row decoder with a novel word-line driver is described. Each driver includes a p-channel select transistor and first and second, significantly separated, n-channel discharging transistors, all of whose drains are connected to the word-line to be controlled. The two discharging transistors are connected in different sections, such as on opposite sides, of the word-line. The driver is controlled by a control line, a select line and a disable line. When the control line is active, it enables the select transistor to select the word-line only if the select line is active. The discharging transistors are controlled through the disable line, discharging the word-lines when the disable line is strobed. In a second embodiment, the disabling activity is segmented such that only one block of the array is discharged at a time. A third embodiment shows the segmentation within an alternate metal, virtual ground array architecture.
REFERENCES:
patent: 4724341 (1988-02-01), Yamada et al.
patent: 4798977 (1989-01-01), Sakui et al.
patent: 4843261 (1989-06-01), Chappell et al.
patent: 5018107 (1991-05-01), Yoshida
patent: 5282175 (1994-01-01), Fujita et al.
patent: 5416741 (1995-05-01), Ohsawa
patent: 5446859 (1995-08-01), Shin et al.
patent: 5519665 (1996-05-01), Chishiki
"Fast-Access BiCMOS SRAM Architecture with a V.sub.ss Generator" by T. Douseki, et al., The Journal of Solid-State Circuits, vol. 26, No. 4, Apr. 1991, pp. 513-517.
S.B. Ali et al., "A 50-ns 256k CMOS Split-Gate EPROM", IEEE Journal of Solid-State Circuits, vol. 23, pp. 79-85, Feb. 1988.
Katsuyuki Sato et al., "A 4-MB Pseudo SRAM Operating at 2.6 .+-.1 V with 3-.mu.A Data Retention Current", IEEE Journal of Solid-State Circuits, vol. 26, pp. 1556-1561, Nov. 1991.
R. Shirata et al., "An Accurate Model of Subbreakdown Due to Band-to-Band Tunneling and its Application", Iedm Technical Digest, pp. 16-17, Dec. 1988.
Tomohisa Wasa et al., "Simple Noise Model and Low-Noise Data-Output Buffer for Ultrahigh-Speed Memories", IEEE Journal of Solid-State Circuits, vol. 25, pp. 1586-1588, Dec. 1990.
Manabu Ando et al., "A 0.1-.mu.A Standby-Current, Ground-Bounce-Immune 1-Mbit CMOS SRAM", IEEE Journal of Solid-State Circuits, vol. 24, pp. 1708-1710, Dec. 1989.
Slezak Yaron
Tovim Asaf Ben
Mai Son
Nelms David C.
Waferscale Integration Inc.
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