Row decoder for nonvolatile memory having a low-voltage power su

Details Row decoder for nonvolatile memory having a low-voltage power su Row decoder for nonvolatile memory having a low-voltage power su

1998-01-21

1999-12-07

Nelms, David

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

36518901, 36523005, G11C 800

Patent

active

059994797

ABSTRACT:
A row decoder for a nonvolatile memory having a low-voltage power supply that minimizes the load capacitance presented to a high voltage source without requiring additional circuitry. The row decoder accomplishes this by providing a local decoder having only one input requiring a boosted voltage higher than the power supply voltage. Further, predecoders are used to reduce the number of local decoders that receive the boosted voltage.

REFERENCES:
patent: 5278802 (1994-01-01), Kersh, III et al.
patent: 5732040 (1998-03-01), Yabe
Johnny C. Chen, T.H. Kuo, Lee E. Cleveland, Chung K. Chung, Nancy Leong, Yong K. Kim, Takao Akaogi, Yasushi Kasa, "A 2.7V only 8Mbx16 NOR Flash Memory" 1996 IEEE Symposium on VLSI Circuits Digest of Technical Papers, pp. 172-173.

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