Row decoder for a semiconductor memory device with fast turn-off

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307443, 307445, 307451, H03K 19094, H03K 1920

Patent

active

050774956

ABSTRACT:
A row decoder for a semiconductor memory device is disclosed. The row decoder comprises: CMOS NAND circuits each having P-channel transistors and N-channel transistors; and CMOS NOR circuits which follow the NAND circuits and have P-channel transistors and one or more N-channel transistors. The ratio of the channel length to the channel width of the P-channel transistors of the NAND circuits is greater than that of the N-channel transistors of the NAND circuits. And, the ratio of the channel length to the channel width of the N-channel transistors of the NOR circuits is greater than that of the P-channel transistors of the NOR circuits.

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