Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-09-12
2006-09-12
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S774000, C257S778000, C257S786000
Reexamination Certificate
active
07105926
ABSTRACT:
A flip chip substrate is provided, which includes a plurality of conductive layers, including a top layer and a bottom layer. A first plurality of contacts, including first and second contacts corresponding to a differential signal pair, are arranged on the top layer within a die bonding area. A second plurality of contacts, including third and fourth contacts corresponding to the differential signal pair, are arranged on the bottom layer. First and second traces are routed between the first and third contacts and between the second and fourth contacts, respectively, wherein the second trace is routed out of the die bonding area on a different layer than the first trace. The traces are routed in a manner that reduces the length difference between the traces.
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Ghahghahi Farshad
Govind Anand
Ramakrishnan Arun
LSI Logic Corporation
Pham Long
Rao Shrinivas H.
Westman, Chapman & Kelly
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