Routing design to minimize electromigration damage to solder...

Details Routing design to minimize electromigration damage to solder... Routing design to minimize electromigration damage to solder...

2007-04-24

2007-04-24

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257SE23020, C257SE21508, C257SE23021, C257S774000, C257S773000, C257S680000, C257S758000, C438S612000

Reexamination Certificate

active

11048204

ABSTRACT:
A novel pad structure for an integrated circuit component that utilizes a bump interconnect for connection to other integrated circuit components that produces a relatively uniform current distribution within the bump of the bump interconnect is presented. The pad structure includes an inner pad implemented on an inner conductive layer of the integrated circuit component, an outer pad implemented on an outer conductive layer of the integrated circuit component, and a plurality of vias connecting the inner pad and outer pad. The outer pad is sealed preferably around its edges with a passivation layer, which includes an opening exposing a portion of the outer pad. The vias connecting the inner pad and outer pad are preferably implemented to lie in a via region within the footprint of the pad opening.

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